The ATC Orion 5 Sputter Deposition System is hosted by the Pratt Microfabrication Facility. Programmable multi-step temperature rampingДЄJA International ATC Orion 5 Sputter Deposition System.Wet & dry oxidation chemistries available.Temperature recipes available up to 1250C.Substrate accommodation: Up to 4вЂќ wafers (batches).The furnace is able to grow oxide films on silicon wafers using a dry or wet oxidation process. The Bruce Oxidation Furnace is hosted by the Pratt Microfabrication Facility. Substrate accommodation: 4вЂі and 6вЂі wafers.Available Chemistries: 1:3 H2SiCl2:NH3 (Stoichiometric), 4:1 H2SiCl2:NH3 (Low-Stress).The Expertech CTR-200 LPCVD system is hosted by the Pratt Microfabrication Facility, and is configured to deposit high quality silicon nitride films via a high temperature, low-pressure chemical reaction process. Automated sample loading with load-lock chamber.Typical Rate: 4-40 nm/min (oxide), 10-100 nm/min (nitride).Substrate accommodation: Small samples up to 8вЂі wafers.

Available Chemistries: 5% SiH4 in 95% N2, NH3, N2O, N2, Ar, He and 80% CF4 in 20% O2.The PlasmaLab System 100 PECVD system is hosted by the Pratt Microfabrication Facility, and is configured to deposit high quality silicon dioxide, silicon nitride and silicon oxynitride films with thicknesses up to several microns via a plasma-assisted chemical reaction process. Oxford Instruments PlasmaLab System 100 PECVD

Oxford plasmalab system 100